Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531167 | Materials Science and Engineering: B | 2008 | 4 Pages |
Abstract
Nanocrystalline n-AlN:Er thin films were deposited on (0 0 1) Silicon substrates by r.f. magnetron sputtering at room temperature to study the correlation between 1.54 μm IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor α = 5 is obtained by combining EDSX and electron probe micro analysis (EPMA) results on reference samples. It secondly presents the relative PL intensities of nanocrystallized samples prepared with identical sputtering parameters as a function of the Er concentration. The structure of crystallites in AlN films is observed by transmission electron microscopy.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
V. Brien, P. Miska, H. Rinnert, D. Genève, P. Pigeat,