| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531188 | Materials Science and Engineering: B | 2007 | 7 Pages |
Abstract
Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Abhaya, G. Amarendra, G. Venugopal Rao, R. Rajaraman, B.K. Panigrahi, V.S. Sastry,