| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531330 | Materials Science and Engineering: B | 2008 | 6 Pages |
Abstract
Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre of a ca. 182 nm GaN layer. To complete the cavity a three-period SiOx/SiNx DBR was deposited onto the GaN surface. Despite the evolution of roughness during the growth of the AlN/GaN DBR, due to cracking of the AlN layers, a cavity mode was observed, with a quality-factor of ∼50. Enhanced single QD emission was observed in micro-photoluminescence studies of the sample, and photon-correlation spectra provided evidence for single photon emission.
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Authors
R.A. Oliver, A.F. Jarjour, R.A. Taylor, A. Tahraoui, Y. Zhang, M.J. Kappers, C.J. Humphreys,