| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531337 | Materials Science and Engineering: B | 2008 | 4 Pages |
Abstract
The work is concerned with complex investigations of the layers of porous indium phosphide (por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy (USXES), spectroscopy of X-ray near-edge absorption fine structure XANES (X-ray absorption near-edge structure) and photoluminescence, obtained by anodic pulse electrochemical etching of single-crystalline plates of InP(1 0 0) of n-type conductivity (n ∼ 1018). The data obtained as a result of this work demonstrated that the surface layers of por-InP have cluster structure with the formation of InP quasi-molecules.
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Authors
E.P. Domashevskaya, V.M. Kashkarov, P.V. Seredin, V.A. Terekhov, S.Yu. Turishchev, I.N. Arsentyev, V.P. Ulin,