Article ID Journal Published Year Pages File Type
1531369 Materials Science and Engineering: B 2008 5 Pages PDF
Abstract

The nano-crystalline PbS/n-Si heterostructure was studied using photocurrent spectra, I–V and C–V characteristics and admittance spectroscopy. The frequency dependent junction capacitance and conductance measurements show the presence of two contributions: first, a defect related mechanism which we attribute to a deep trap level with a large cross-section in nano-crystals with smaller sizes around 5 nm at the interface with Si and a second mechanism with an activation energy of about 250 meV, attributed to carrier transport in relatively large PbS grains of about 15 nm in size.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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