| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531460 | Materials Science and Engineering: B | 2007 | 4 Pages |
Abstract
The boron-doped silicon nano-wires (B-SiNWs) were fabricated by chemical vapor deposition (CVD) and Al2O3 template process at a low temperature (620 °C). It is found that the peaks in Raman scattering and photoluminescence spectra shift after boron-doping, indicating that the crystalline degree of B-SiNWs was slightly varied compared with un-doped SiNWs. Finally, the mechanism of B-doped SiNWs was discussed briefly.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jun Jie Niu, Jian Nong Wang, Yi Xiang Chen,