Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531504 | Materials Science and Engineering: B | 2007 | 5 Pages |
Abstract
We present a simple growth of highly aligned silicon nanocones by using bias-enhanced microwave plasma CVD of gas mixture of hydrogen and methane. SiO2 and nickel films were used as a silicon precursor and a seeding material for patterning cone structure, respectively. SEM studies showed that the nanocones have nanometer-size tips and sub micrometer-size bases. TEM analysis revealed that the nanocones have amorphous structure with nickel on the tips. The model for formation of silicon nanostructures will also be suggested.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sutichai Chaisitsak,