Electrical properties study of double porous silicon layers: Conduction mechanisms

The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investigated by current–voltage (I–V) and admittance spectroscopy measurements. From I–V characteristics and the band diagram of the structure, it was concluded that tunneling current is prevailing at low forward polarization. The temperature dependence of the conductance shows the existence of a hopping conduction in the PS layer.