Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531543 | Materials Science and Engineering: B | 2007 | 6 Pages |
Abstract
β-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10–30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO2 composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires.
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Authors
X.W. Du, X. Zhao, S.L. Jia, Y.W. Lu, J.J. Li, N.Q. Zhao,