Article ID Journal Published Year Pages File Type
1531543 Materials Science and Engineering: B 2007 6 Pages PDF
Abstract

β-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10–30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO2 composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires.

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Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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