Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531569 | Materials Science and Engineering: B | 2007 | 6 Pages |
Abstract
The density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si2H6 source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Chan Park, Kyoungmin Kim, Eunkyeom Kim, Junghyun Sok, Kyoungwan Park, Moonsup Han,