Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531624 | Materials Science and Engineering: B | 2007 | 4 Pages |
Abstract
MoS2 films were prepared by chemical bath deposition using Ni interlayer, which was deposited electrolessly on Si substrates. The combined techniques of X-ray diffraction, field emission scanning electron microscope (FESEM), Raman spectroscopy and optical reflective spectra were used for characterization of MoS2 films at different conditions. Results indicated that the type-II MoS2 films oriented with their c axis perpendicular to the plane of Si substrates were obtained at annealing temperature greater than 800 °C. The effect of nickel on the orientation of 2H-MoS2 crystallites can be explained on the basis of binary Ni-S phase diagram. The thin films have a direct optical bandgap of 1.87 eV as a result of optical reflective spectra. This article offers an easy way to prepare type-II MoS2 film of better crystallite.
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Authors
Ronghui Wei, Haibin Yang, Kai Du, Wuyou Fu, Minghui Li, Qingjiang Yu, Lianxia Chang, Yi Zeng, Yongming Sui, Hongyang Zhu, Guangtian Zou,