Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method

The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm2 was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.