A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

A new hole surface scattering model for FBMC simulations is presented for unstrained Si and biaxially strained Si/SiGe PMOSFETs. The new scattering model was developed for quantum corrected spatial hole charge distributions at the Si/SiO2 interface, where the quantum correction is based on the improved modified local density approximation (IMLDA). To extract channel mobility efficiently, a new linear response (LR) MC method has been developed. The new LRMC method, which is faster than standard MC by about three orders of magnitude, allows to extract the parameters of the surface scattering model for holes from the available measurements in an efficient manner. The model has been calibrated and verified for a wide range of doping levels (7.8×10157.8×1015 to 6.6×1017cm−3), temperatures (223–443 K) and Ge-content up to 30% by comparison to experimental data. A 23 nm PMOSFET with and without a strained Si layer on top of the substrate has been simulated with our new FBMC model. Drain current enhancement due to biaxial strain is found to be reduced in comparison to the NMOSFET case.