Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531681 | Materials Science and Engineering: B | 2006 | 5 Pages |
Abstract
High mobility semiconductors such as Ge and III–V compounds will be used in future field effect transistors, with the appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit leakage. The band offsets of various gate dielectrics including HfO2, Al2O3, Gd2O3, Si3N4 and SiO2 on III–V semiconductors such as GaAs, InAs, GaSb and GaN have been calculated using the method of charge neutrality levels. Generally, the conduction band offsets are found to be over 1 eV, so they should inhibit leakage for these dielectrics. There is reasonable agreement to experiment where it exists, although the GaAs:SrTiO3 case is even worse in experiment.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
J. Robertson, B. Falabretti,