Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531745 | Materials Science and Engineering: B | 2006 | 5 Pages |
Abstract
A multilayer structure was simulated using spontaneous intermixing of Co and Al in epitaxial Co(1 1 2¯ 0)/CoAl/Co(1 1 2¯ 0) structures. When Al atoms with 0.1 eV energy were deposited on Co(1 1 2¯ 0), an Al(1 0 0) thin film was grown without any intermixing. Interestingly, during subsequent deposition of Co atoms on the grown Al(1 0 0) thin film, an intermixed layer of ordered CoAl structure was spontaneously formed and a highly oriented Co(1 1 2¯ 0) crystalline phase was grown above the intermixed region. From the calculations of nearest neighbor distributions, various compositions of CoxAl1−x structures were observed in the mixed region.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sang-Pil Kim, Yong-Chae Chung, Seung-Cheol Lee, Kwang-Ryeol Lee, Deok-Soo Kim,