| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531800 | Materials Science and Engineering: B | 2006 | 9 Pages |
Abstract
Nitrogen is one of the most important elements in Czochralski (CZ) silicon used in ultra-large scale integrity circuits (ULSI). In last decades, nitrogen-doped Czochralski (NCZ) silicon, which has been widely applied in microelectronic industry, has attracted much attention. In this presentation, the behavior of NCZ silicon treated in rapid thermal process (RTP) has been reviewed. The influence of RTP on oxygen precipitation, bulk microdefects, denuded zone and nitrogen and oxygen complexes in NCZ silicon has been investigated. The interaction of nitrogen with oxygen and vacancies in CZ silicon during RTP is also discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Deren Yang, Ming Li, Can Cui, Xiangyang Ma, Duanlin Que,