Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531802 | Materials Science and Engineering: B | 2006 | 6 Pages |
Abstract
This report contains results of the implementation of the modified method of FT-IR measurements, which allows one to improve the sensitivity for more than one order of magnitude. The new method is based mainly on (1) the modified FT-IR system with enhanced photometric accuracy achieved by a suppression of the influence of the instabilities, and (2) using Brewster geometry to suppress the interference effects. The method contains built-in checking of the achieved accuracy of the recorded spectrum. The examples of the determination of [N] and [C] on the 1014Â cmâ3-level in 2Â mm thick samples as well as in industrial wafers are presented.
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Authors
V.D. Akhmetov, H. Richter, N. Inoue,