| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1531804 | Materials Science and Engineering: B | 2006 | 4 Pages |
Abstract
As evidenced by the HP-dependent PL spectra, the treatment of Si-N under HP at 1070-1400Â K stimulates precipitation of oxygen interstitials (Oi) with generation of small oxygen-containing defects. The effect of HP on microstructure of nitrogen-containing Cz-Si is related to stress-induced activation of nitrogen to form nuclei for precipitation of Oi's.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Misiuk, B. Surma, Deren Yang, M. Prujszczyk,