Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531815 | Materials Science and Engineering: B | 2006 | 5 Pages |
Abstract
Numerical results are given for the silicon bar grown in an edge-defined film-fed growth (E.F.G.) system with a die radius r0e = 20 (cm Ã 10â2).
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Epure, L. Braescu, St. Balint,