Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1531831 | Materials Science and Engineering: B | 2006 | 4 Pages |
Abstract
We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current–voltage (I–V) behaviors. However, the contacts become ohmic with specific contact resistance of ∼10−4 Ω cm2 when annealed at temperatures 330–530 °C for 1 min in air. The 530 °C-annealed Ir/Ag contacts give a reflectance of ∼75% at a wavelength of 405 nm, which is somewhat higher than that (∼71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Keun-Yong Ban, Hyun-Gi Hong, Do-Young Noh, Jung Inn Sohn, Dae-Joon Kang, Tae-Yeon Seong,