| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1532023 | Materials Science and Engineering: B | 2006 | 4 Pages |
Abstract
We investigate the temperature dependent Raman spectra of Mn implanted (Ga,Mn)N samples with five Mn implantation doses. A small shoulder at 572.4 cm−1 on the high energy side of the main Raman peak E2H has been attributed to the Mn-related local vibrational mode (LVM). It is found that with the increase of Mn implantation dose the intensity ratio of LVM to that of the E2H(ILVM/IE2H) increases at first and tends to saturate at high implantation dose. In addition, at high temperature or after rapid thermal anneal treatment, the value of ILVM/IE2H decreases significantly, explaining the reason why it is difficult to observe Mn-related LVM reported in the literature.
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Authors
Y.H. Zhang, L.L. Guo, W.Z. Shen,