Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1532024 | Materials Science and Engineering: B | 2006 | 4 Pages |
Abstract
The electronic paramagnetic resonance (EPR) parameters (g factors g//, g⊥ and zero-field splitting D) of Ni3+ ions at both M+ (M = Cu, Ag) and Ga3+ sites in MGaS2 ternary semiconductors are calculated from the high-order perturbation formulas based on the two spin-orbit (SO) coupling parameter model for 3d7 ions in tetragonal symmetry. The calculated results suggest that Ni3+ ions replace the monovalent M+ ions in MGaS2 crystals. This point is contrary to the previous assumption that Ni3+ ions substitute for the isovalent Ga3+ ions to attain the charge neutrality. The reasonableness of the suggestion is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zheng Wen-Chen, Wu Xiao-Xuan, Zhou Qing, He Lv,