| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1532061 | Materials Science and Engineering: B | 2006 | 4 Pages |
Abstract
High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400Â nm, while that for fast visible photo-detecting is 17 with film thickness of 3400Â nm.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Chun-Yu Lin, Yean-Kuen Fang, Shih-Fang Chen, Ping-Chang Lin, Chun-Sheng Lin, Tse-Heng Chou, Jenn Shyong Hwang, Kuang I. Lin,