| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1532080 | Materials Science and Engineering: B | 2006 | 7 Pages |
Abstract
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide band gap devices. In this paper, we present a detailed study of drain Current Deep Level Transient Spectroscopy CDLTS measurements performed on InAlAs/InGaAs/InP HEMT of two different samples. We demonstrate that a remarkable correlation exists between deep levels observed by CDLTS and the presence of parasitic effects such as kink and hysteresis effects.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M.M. Ben Salem, S. Bouzgarrou, N. Sghaier, A. Kalboussi, A. Souifi,