Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1532082 | Materials Science and Engineering: B | 2006 | 8 Pages |
Low-resistivity n-type silicon has been doped with gold and characterised using Rutherford backscattering spectrometry and Hall effect measurements. Schottky barrier diodes were fabricated on silicon with no gold and on gold-doped silicon and then characterised using current–voltage and capacitance–voltage measurements. Results from the material characterisation experiments show that the diffusion profile of gold in thin silicon substrates is U-shaped and that gold-doped silicon has a higher resistivity. Results from the device characterisation experiments indicate a deviation from “normal” diode behaviour to ohmic behaviour. The diode characteristics become typical of devices made of high resistivity material with relaxation-like properties, a material that is suitable for radiation-hard detector fabrication.