| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1532099 | Materials Science and Engineering: B | 2006 | 4 Pages |
Abstract
A layer of copper was sputtered onto an indium tin oxide (ITO) glass substrates to form an ITO/Cu film, using a direct current magnetron operated at room temperature and in argon gas. The ITO and ITO/Cu films were heated in vacuum, and in hydrogen gas, to study their dependence of electronic and optical properties on annealing temperature. The resistivity of the ITO film was reduced from 6.2 × 10−4 to 2.7 × 10−4 Ω cm, and the average optical transmittance was improved to above 90% by the annealing process. The ITO/Cu film showed a low value of resistivity of 2.8 × 10−4 Ω cm and the transmittance was between 58 and 72%.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Tien-Chai Lin, Shang-Chou Chang, Chin-Fu Chiu,