Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1532192 | Materials Science and Engineering: B | 2006 | 5 Pages |
Abstract
We have investigated STM images of the (1â1â0) cross-sectional surface of Mn-doped GaAs using first principles total-energy pseudopotential calculations. We focus on configurations with Mn interstitial in the uppermost surface layers. In particular, we have found that Mn impurities, surrounded by Ga or As atoms, introduce in both cases strong local distortions in the GaAs(1â1â0) surface, with bond length variations up to 8% on surface and non-negligible relaxations effects propagating up to the third subsurface layer. In both cases interstitial Mn induces a spin-polarization on its nearest neighbors, giving rise to a ferromagnetic Mn-As and to antiferromagnetic Mn-Ga configuration.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Stroppa, X. Duan, M. Peressi,