| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1532201 | Materials Science and Engineering: B | 2006 | 4 Pages |
Abstract
Metal-insulator-diode random access memory (MIDRAM) structures, composed of three successive tunnel barriers separated by metallic layers, are devices presenting simultaneously blocking and memory functionalities, and so, would be suitable for integration in low dimensional semiconductor-free memory matrix. It is observed on a same device magneto-resistive and rectified currents, however on the conducting window of the diode, the respective magneto-resistance is weak.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Iovan, V. Da Costa, Y. Henry, D. Stoeffler,