| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1532208 | Materials Science and Engineering: B | 2006 | 5 Pages |
Abstract
It is demonstrated that N-doping can be applied beneficially to control the switching field of the 'free' layer in magnetic trilayer films of the MTJ type. It is thus possible to construct an all Fe-electrode magnetic tunnel junction (MTJ) that displays the tunneling magnetoresistance (TMR) effect by altering the switching field of one Fe layer using N-doping. The ability to control the magnetic softness of high magnetic moment materials is important in regard to their incorporation into TMR devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M.T. Georgieva, N.D. Telling, P.J. Grundy,