| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1532253 | Materials Science and Engineering: B | 2006 | 6 Pages |
Abstract
Real defect structure, growing technology and physical properties of doped GaSe:S crystals are presented. From comparative experiment on CO2 laser SHG at identical experimental conditions 1.45 times advantages of GaSe:S (2 wt%) in relation to pure and GaSe:In (0.1 wt%) crystals are developed.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yu.M. Andreev, V.V. Atuchin, G.V. Lanskii, A.N. Morozov, L.D. Pokrovsky, S.Yu. Sarkisov, O.V. Voevodina,