Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1532767 | Materials Science and Engineering: R: Reports | 2006 | 28 Pages |
Abstract
Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but their development is limited because of a lack of suitable substrates. This paper deals with the crystal growth of gallium nitride, the processes leading to GaN bulk crystals being significantly expanded during the last decade (the ones involving GaN thin films or nanocrystallites are not studied in this review). The main reviewed routes are: (i) the high pressure nitrogen solution growth (H.P.N.S.G.), (ii) the Na flux method, and (iii) the ammonothermal crystal growth.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Annaïg Denis, Graziella Goglio, Gérard Demazeau,