Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1533209 | Optics Communications | 2016 | 7 Pages |
Abstract
Epsilon-near-zero (ENZ, dielectric constant εrâ0) materials have attracted significant research interest, however, their applications in the near-infrared regime are very limited. Conductive oxide (COx), owing to its moderate carrier concentration, is a candidate for ENZ material at telecom wavelengths based on the Drude model. Herein, we report an indium tin oxide (ITO) thin film as an ENZ material with cross-over wavelength, where real part of permittivity crosses zero, and enhanced light absorption at telecom wavelengths. We also report the investigation of electro-absorption modulation based on a metal-oxide-semiconductor (MOS)-like structure, more specifically a metal-oxide-ITO stack, where ITO works around ENZ. Based on the attenuated total reflectance (ATR) configuration, our test shows great promise for future electro-optical (EO) modulators. The operation speed of the MOS-like structure is limited mainly by RC delay.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kaifeng Shi, Zhaolin Lu,