A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers

An In0.53Ga0.47As/InP avalanche photodiodes (APD) structure with double multiplication layers and double charge layers has been proposed. The calculated results with considering the dead space effect show that a thin 2nd multiplication layer will reduce the excess noise factor F in this structure for a fixed mean gain . And its performances will reach the best when the 2nd multiplication layer is 0.01 µm, which will reduce the excess noise factor 7% compared to a conventional APD for =10. The effects of 1st and 2nd charge layers on the APD have also been studied in this paper.