Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1533342 | Optics Communications | 2016 | 6 Pages |
Abstract
The polarization characteristics of a 370Â nm GaN-based ultraviolet light-emitting diode (UV-LED) were controlled by a subwavelength grating (SWG) on a low-refractive-index SiO2 underlayer inserted between the SWG and LED surface. Highly polarized UV emission was demonstrated by utilizing the Bloch eigenmode resonance in the SWG structure for the two orthogonal polarization states. The polarization ratio of the emission reached 16:1, which is the highest reported to date for direct emission from a GaN-based UV-LED. The decrease in UV emission was also prevented by suppressing the diffracted plane wave and by increasing the amplitude of the wave incident onto the SWG structure; this increase was achieved by taking advantage of the low refractive index of SiO2.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yuusuke Takashima, Masato Tanabe, Masanobu Haraguchi, Yoshiki Naoi,