Wide bandwidth chaotic signal generation in a monolithically integrated semiconductor laser via optical injection

Wide bandwidth chaotic signal generation in a three-section monolithically integrated semiconductor laser (MISL) under external optical injection is investigated experimentally. Through evaluating the effective bandwidth of chaotic signals, the influences of the optical injection on the bandwidth of chaotic signal from the MISL are analyzed. The experimental results indicate that, for the currents of the DFB section (IDFB) and the phase section (IP) are fixed at 70.00 mA and 34.00 mA, respectively, the effective bandwidth of chaos signal generated by the solitary MISL reaches its maximum value of 14.36 GHz when the current of the amplification section (IA) takes 23.22 mA. After an external optical injection is introduced into the MISL, the effective bandwidth of the generated chaotic signal can be beyond 2.5 times of the maximum value. Furthermore, the effects of the injection strength and the frequency detuning on the effective bandwidth of the generated chaotic signal are also discussed.