Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1534223 | Optics Communications | 2014 | 4 Pages |
Abstract
Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Wen Cong, Dechun Li, Shengzhi Zhao, Kejian Yang, Xiangyang Li, Hui Qiao, Ji Liu,