Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1534428 | Optics Communications | 2014 | 5 Pages |
Abstract
We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ho Young Chung, Kie Young Woo, Su Jin Kim, Tae Geun Kim,