Analysis of tunable transmission properties in photonic crystals containing doped semiconductor

We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor, n-GaAs, as a defect layer. With the existence of n-GaAs, the defect modes can be tuned by external magnetic field, doping concentration, and thickness of the defect layer. Among these three factors, the thickness of the defect layer is the most effective one. The analysis made is the near infrared region and the results are of technical use in the design of a filter with narrowband transmittance peaks.