| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1535066 | Optics Communications | 2013 | 5 Pages |
Abstract
A model for optical injection locking in quantum dot (QD) lasers is stated where the electron and hole dynamics are treated separately and their scenarios in the ground state (GS), excited state (ES) in the QDs and in the wetting layer (WL) are examined. A decline in the GS electron occupation probability, and then, a left returned spiral behavior is shown in their phase space projections at high injection ratio. The GS occupation probabilities for electrons and holes are reduced drastically with increasing injection ratio. The injection map is also plotted.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Basim Abdullattif Ghalib, Sabri J. Al-Obaidi, Amin H. Al-Khursan,