| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1535949 | Optics Communications | 2012 | 6 Pages |
Abstract
To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, flat-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xueqiang Zhang, Yongqing Huang, Xiaofeng Duan, Xinye Fan, Qi Wang, Xia Zhang, Bing Shen, Wei Wang, Xiaomin Ren,