| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1535956 | Optics Communications | 2012 | 4 Pages |
Abstract
Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) emitting around 1.5 μm is investigated both above and below the threshold. Above the threshold, LEFs at three different wavelengths around the gain peak of 1.53 μm by the injection locking technique are obtained to be 1.63, 1.37 and 1.59. Then by Hakki–Paoli method LEF is found to decrease with increased current and shows a value of less than 1 below the threshold. These small LEF values have clearly indicated that our developed InAs/InP QDs are perfect and promising gain materials for QD MWLs, QD mode-locked lasers (QD MLLs) and QD distributed-feedback (QD DFB) lasers around 1.5 μm.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Z.J. Jiao, Z.G. Lu, J.R. Liu, P.J. Poole, P.J. Barrios, D. Poitras, G. Pakulski, J. Caballero, X.P. Zhang,