Dispersive bi-stability in a vertical microcavity-based saturable absorber due to photo-thermal effect and initial phase-detuning

Round-trip phase-shifts with intensity of an input signal due to saturable index change and optically induced thermal effects in a vertical cavity semiconductor (quantum wells) saturable absorber (VCSSA) are investigated analytically to observe counter-clockwise bi-stability in transmission mode and clockwise bi-stability in reflection mode. Simultaneous effects of Kerr nonlinearity and cavity heating on resonance wavelength-shift of the VCSSA micro-cavity are investigated. It is found that these bi-stable characteristics are possible to the absorption edge of nonlinear material for long wavelength side operations of low intensity resonance wavelength of the micro-cavity, where dispersion of absorption and refraction are neglected over a small range of optical wavelength tuning (δλ∼10 nm). Simulations are carried out to find out optimized parameters of the device for bi-stable characteristics. Operations are demonstrated for InGaAs/InP quantum wells based VCSSA with low intensity resonance wavelength of 1570 nm. For counter-clockwise bi-stable switching at working wavelength of 1581 nm, an input intensity variation of 0.79IS is required with top (Rt) and back DBR reflectivity (Rb) of 91% and 93%, respectively, where IS represents the absorption saturation intensity of nonlinear medium. Whereas, the clockwise bi-stability occurs at 0.22IS for working wavelength of 1578 nm with Rt of 90% and Rb of 98%, respectively.