Hybrid integration of waveguide photodetectors with silicon-on-insulator micro-ring resonator on silicon substrate

To integrate compound semiconductors with foreign substrates can lead to superior or novel functionalities. The design and fabrication of heterogeneously integrated waveguide photodetectors with Silicon-on-Insulator micro-ring resonator are reported in this paper. The micro-ring resonator was fabricated by utilizing electron beam lithography and inductively-coupled-plasma reactive ion etching technique, which is used for wavelength selectivity. The waveguide photodetectors fabricated by wet etching were used for light detection. The free spectral range (FSR) of the hybrid integrated device was about 24 nm, and the dark current of 7.9 nA was achieved at the reverse bias voltage of 2.0 V. The measured response of the photodetector at through port was 0.538 μA/W at the wavelength of 1556 nm and a reverse bias of 1 V.