Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1536450 | Optics Communications | 2012 | 4 Pages |
Abstract
In this article, we presented a study of InAs0.04P0.96/InP Bragg-spaced quantum wells (BSQWs), which were grown by metal organic chemical vapor deposition (MOCVD). The quantum wells were characterized by photoluminescence (PL), double-crystal x-ray diffraction (DC-XRD), and reflection spectra. We found that the BSQWs structure grown at 580 °C appears to be extremely abrupt, uniform, free of misfit dislocations, and of narrow PL line width. From the reflection spectra at different temperatures, we presented a theoretical analysis of the changes in band structure for resonant and near-resonant wells, and proposed a new scheme of using the temperature to tune the Bragg resonance of Bragg spaced quantum wells.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Wei Yan, Xiao-Ming Li, Tao Wang,