Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1536453 | Optics Communications | 2012 | 6 Pages |
Abstract
In this paper, effects of 160Â keV electron irradiated “Panda” type Polarization-Maintaining optical fiber at 1310Â nm are investigated by us. Attenuation coefficient induced in optical fiber by electron beams at 1310Â nm increases with increase in electron fluence. Electron irradiation-induced damage mechanism are studied by means of CASINO simulation program, the X-ray photoelectron spectroscopy (XPS), electron spin resonance spectrometer (EPR) and Fourier transform infrared spectroscopy (FTIR). The results show that Si-OH impurity defect concentration is the main reason of increasing attenuation coefficient at 1310Â nm.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhang Hong-Chen, Liu Hai, Xue Hui-Jie, Qiao Wen-Qiang, He Shi-Yu,