Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1536863 | Optics Communications | 2012 | 4 Pages |
Abstract
Waveguide effect was observed in He+ implantation ZnO with different energies and doses. Computer code was used to simulate the process of ion implantation into ZnO crystal and the implantation-produced damage distribution is extracted according to RBS experimental result. The prism coupling and end-face coupling technique are used to investigate the waveguide properties. The reconstructed refractive index profile shows that the ordinary index decreases at the near surface region after He+ implantation under different conditions. The damage layer, which is governed by nuclear energy deposition of He+ ions, makes itself a reduced index barrier for guiding light. Ion-implantation, generally used for electrical isolation, may play a role for optical confinement in ZnO light emitting devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xianbing Ming, Fei Lu, Jiaojian Yin, Ming Chen, Shaomei Zhang, Jinhua Zhao, Xiuhong Liu, Yujie Ma, Xiangzhi Liu,