| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1537619 | Optics Communications | 2011 | 5 Pages |
Abstract
A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO4 laser at 912Â nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr4+:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (TU) of the saturable absorber on the QML laser performance was investigated. Using the TUÂ =Â 95% Cr4+:YAG, as much as an average output power of 2.0Â W pulsed 912Â nm laser was produced at an absorbed pump power of 25.0Â W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~Â 224Â kHz and ~Â 160Â MHz, respectively. Whereas the maximum output power was reduced to 1.3Â W using the TUÂ =Â 90% Cr4+:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Fei Chen, Xin Yu, Xudong Li, Renpeng Yan, Cheng Wang, Deying Chen, Zhonghua Zhang, Junhua Yu,