| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1537712 | Optics Communications | 2010 | 5 Pages |
Abstract
The cavity enhancement effect of the transparent semiconductor SnO2 on the magneto-optical Kerr response of the glass/Al/SnO2/PtMnSb/SnO2 multilayer structure has been investigated using a matrix method. It has been demonstrated that device optimization leads to large Kerr rotation and figure of merit (FOM) with a vanishing ellipticity in the visible portion of the electromagnetic spectrum, especially at short wavelengths. This optimization is of interest in view of optical data storage technology. Using numerical simulations, we have also shown that in the optimum condition, the device readout parameters behave smoothly against the design variables.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Mehrdad Moradi, Majid Ghanaatshoar,