Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1538007 | Optics Communications | 2011 | 8 Pages |
Abstract
A double lambda four-level system could be implemented with biexcitonic transitions on GaAs quantum well. We observed that the phase dependent biexcitonic transition could be explained by interference between one-photon and three-photon transition in a double lambda four-level system. An ultralow-light switch pulse could control 80% of biexcitonic absorption, which demonstrated all-optical switching with biexcitonic double lambda system.
Research Highlights►Phase dependent biexcitonic transition by interference in a double lambda four-level system. ►Ultralow-light switch pulse controls 80% of biexcitonic absorption. ►Application to optical communication technology for ultra fast switching with semiconductor.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hoonsoo Kang, Young Ho Park, Ik-Bu Sohn, Mun Seok Jeong,