| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1538138 | Optics Communications | 2010 | 4 Pages |
Abstract
Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 °C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 × 1016 cm− 3, resistivity of 15.95 Ω-cm and hole mobility of 3.95 cm2/Vs, respectively. Codoped ZnO thin films were found to be highly c-axis oriented with good crystal quality. A neutral acceptor-bound exciton and donor–acceptor-pair emissions that appeared at room temperature photoluminescence measurement verify p-type conduction in Al and N codoped ZnO film. The current–voltage characteristics of p–n heterojunction evidently showed a diode like rectifying behaviour.
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Authors
Amit Kumar, Manoj Kumar, Beer Pal Singh,